Granted Patent
Utility
US 4,994,871 · App. 07/279,392
Insulated gate bipolar transistor with improved latch-up current level and safe operating area
Inventors:
Hsueh-Rong Chang, Bantval J. Baliga
Patented Case
View Patent ↗
Granted: Feb 19, 1991
Filed: Dec 2, 1988
Inventors
Hsueh-Rong Chang
Bantval J. Baliga
Assignee (at issue)
General Electric Company
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.