IP Library › Granted Patent US 4,994,883
Granted Patent Utility
US 4,994,883 · App. 07/416,171

Field controlled diode (FCD) having MOS trench gates

Inventors: Hsueh-Rong Chang, Bantval J. Baliga
Patented Case View Patent ↗
Granted: Feb 19, 1991 Filed: Oct 2, 1989
Inventors
Hsueh-Rong Chang
Bantval J. Baliga
Assignee (at issue)
General Electric Company

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Quick Facts
Patent No.
US 4,994,883
App. No.
07/416,171
Filed
1989-10-02
Granted
1991-02-19
Kind
A