Granted Patent
Utility
US 5,007,982 · App. 07/217,536
Reactive ion etching of silicon with hydrogen bromide
Inventor:
Len Y. Tsou
Patented Case
View Patent ↗
Granted: Apr 16, 1991
Filed: Jul 11, 1988
Inventor
Len Y. Tsou
Assignee (at issue)
North American Philips Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.