IP Library Granted Patent US 5,036,021
Granted Patent Utility
US 5,036,021 · App. 07/259,558

Method of producing a semiconductor device with total dielectric isolation

Inventor: Hiroshi Goto
Patented Case View Patent ↗
Granted: Jul 30, 1991 Filed: Oct 18, 1988
Inventor
Hiroshi Goto
Assignee (at issue)
Fujitsu Limited

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Quick Facts
Patent No.
US 5,036,021
App. No.
07/259,558
Filed
1988-10-18
Granted
1991-07-30
Kind
A