Granted Patent
Utility
US 5,089,871 · App. 07/547,828
Increased voltage MOS semiconductor device
Inventor:
Tatsuhiko Fujihara
Patented Case
View Patent ↗
Granted: Feb 18, 1992
Filed: Jul 3, 1990
Inventor
Tatsuhiko Fujihara
Assignee (at issue)
FUJI ELECTRIC CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.