IP Library › Granted Patent US 5,100,820
Granted Patent Utility
US 5,100,820 · App. 07/711,035

MOSFET fabrication process with lightly-doped drain using local oxidation step to pattern gate electrode

Inventor: Ko Tsubone
Patented Case View Patent ↗
Granted: Mar 31, 1992 Filed: Jun 6, 1991
Inventor
Ko Tsubone
Assignee (at issue)
OKI ELECTRIC INDUSTRY CO., LTD.

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Quick Facts
Patent No.
US 5,100,820
App. No.
07/711,035
Filed
1991-06-06
Granted
1992-03-31
Kind
A