Granted Patent
Utility
US 5,151,374 · App. 07/735,086
Method of forming a thin film field effect transistor having a drain channel junction that is spaced from the gate electrode
Inventor:
Neng-Wei Wu
Patented Case
View Patent ↗
Granted: Sep 29, 1992
Filed: Jul 24, 1991
Inventor
Neng-Wei Wu
Assignee (at issue)
Industrial Technology Research Institute
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.