Granted Patent
Utility
US 5,153,142 · App. 07/576,959
Method for fabricating an indium tin oxide electrode for a thin film transistor
Inventor:
In-Cha Hsieh
Patented Case
View Patent ↗
Granted: Oct 6, 1992
Filed: Sep 4, 1990
Inventor
In-Cha Hsieh
Assignee (at issue)
Industrial Technology Research Institute
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.