Granted Patent
Utility
US 5,162,883 · App. 07/757,676
Increased voltage MOS semiconductor device
Inventor:
Tatsuhiko Fujihira
Patented Case
View Patent ↗
Granted: Nov 10, 1992
Filed: Sep 10, 1991
Inventor
Tatsuhiko Fujihira
Assignee (at issue)
FUJI ELECTRIC CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.