Granted Patent
Utility
US 5,162,888 · App. 07/351,669
High DC breakdown voltage field effect transistor and integrated circuit
Inventors:
Ramon S. Co, Kenneth W. Ouyang, Jui-Chun Liang
Patented Case
View Patent ↗
Granted: Nov 10, 1992
Filed: May 12, 1989
Inventors
Ramon S. Co
Kenneth W. Ouyang
Jui-Chun Liang
Assignee (at issue)
Western Digital
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.