IP Library › Granted Patent US 5,169,798
Granted Patent Utility
US 5,169,798 · App. 07/546,128

Forming a semiconductor layer using molecular beam epitaxy

Inventors: David Eaglesham, Hans-Joachim L. Gossmann
Patented Case View Patent ↗
Granted: Dec 8, 1992 Filed: Jun 28, 1990
Inventors
David Eaglesham
Hans-Joachim L. Gossmann
Assignee (at issue)
AT&T Bell Laboratories

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Quick Facts
Patent No.
US 5,169,798
App. No.
07/546,128
Filed
1990-06-28
Granted
1992-12-08
Kind
A