Granted Patent
Utility
US 5,179,049 · App. 07/794,945
Heat treating apparatuses for semiconductors and high purity silicon carbide parts for the apparatuses and a method of making thereof
Inventors:
Hideji Numata, Takuro Ono, Nobuo Kageyama, Koji Furukawa, Ryuhei Makimura
Patented Case
View Patent ↗
Granted: Jan 12, 1993
Filed: Nov 20, 1991
Inventors
Hideji Numata
Takuro Ono
Nobuo Kageyama
Koji Furukawa
Ryuhei Makimura
Assignees (at issue)
ASAHI GLASS CO., LTD.
PACIFIC RUNDUM CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.