Granted Patent
Utility
US 5,192,987 · App. 07/701,792
High electron mobility transistor with GaN/Al.sub.x Ga.sub.1-x N heterojunctions
Inventors:
Muhammed A. Khan, James M. VanHove, Jon N. Kuznia, Donald T. Olson
Patented Case
View Patent ↗
Granted: Mar 9, 1993
Filed: May 17, 1991
Inventors
Muhammed A. Khan
James M. VanHove
Jon N. Kuznia
Donald T. Olson
Assignee (at issue)
APA Optics, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.