Granted Patent
Utility
US 5,233,207 · App. 07/719,626
MOS semiconductor device formed on insulator
Inventor:
Kenji Anzai
Patented Case
View Patent ↗
Granted: Aug 3, 1993
Filed: Jun 24, 1991
Inventor
Kenji Anzai
Assignee (at issue)
NIPPON STEEL CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.