Granted Patent
Utility
US 5,256,455 · App. 07/825,975
Method of forming film of tantalum oxide by plasma chemical vapor deposition
Inventor:
Youichirou Numasawa
Patented Case
View Patent ↗
Granted: Oct 26, 1993
Filed: Jan 27, 1992
Inventor
Youichirou Numasawa
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.