IP Library Granted Patent US 5,264,713
Granted Patent Utility
US 5,264,713 · App. 07/715,400

Junction field-effect transistor formed in silicon carbide

Inventor: John Williams Palmour
Patented Case View Patent ↗
Granted: Nov 23, 1993 Filed: Jun 14, 1991
Inventor
John Williams Palmour
Assignee (at issue)
Cree Research Inc.

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Quick Facts
Patent No.
US 5,264,713
App. No.
07/715,400
Filed
1991-06-14
Granted
1993-11-23
Kind
A