IP Library Granted Patent US 5,266,507
Granted Patent Utility
US 5,266,507 · App. 07/884,773

Method of fabricating an offset dual gate thin film field effect transistor

Inventor: Neng-Wei Wu
Patented Case View Patent ↗
Granted: Nov 30, 1993 Filed: May 18, 1992
Inventor
Neng-Wei Wu
Assignee (at issue)
Industrial Technology Research Institute

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Quick Facts
Patent No.
US 5,266,507
App. No.
07/884,773
Filed
1992-05-18
Granted
1993-11-30
Kind
A