Granted Patent
Utility
US 5,266,510 · App. 07/566,433
High performance sub-micron p-channel transistor with germanium implant
Inventor:
Ruojia Lee
Patented Case
View Patent ↗
Granted: Nov 30, 1993
Filed: Aug 9, 1990
Inventor
Ruojia Lee
Assignee (at issue)
Micron Technology, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.