Granted Patent
Utility
US 5,286,344 · App. 07/898,505
Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride
Inventors:
Guy T. Blalock, David S. Becker, Fred L. Roe
Patented Case
View Patent ↗
Granted: Feb 15, 1994
Filed: Jun 15, 1992
Inventors
Guy T. Blalock
David S. Becker
Fred L. Roe
Assignee (at issue)
Micron Technology, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.