Granted Patent
Utility
US 5,286,664 · App. 07/955,356
Method for fabricating the LDD-MOSFET
Inventor:
Tadahiko Horiuchi
Patented Case
View Patent ↗
Granted: Feb 15, 1994
Filed: Oct 1, 1992
Inventor
Tadahiko Horiuchi
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.