IP Library Granted Patent US 5,288,518
Granted Patent Utility
US 5,288,518 · App. 07/894,584

Chemical vapor deposition method for forming fluorine containing silicon oxide film

Inventor: Tetsuya Homma
Patented Case View Patent ↗
Granted: Feb 22, 1994 Filed: Jun 5, 1992
Inventor
Tetsuya Homma
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 5,288,518
App. No.
07/894,584
Filed
1992-06-05
Granted
1994-02-22
Kind
A