Granted Patent
Utility
US 5,288,653 · App. 07/841,070
Process of fabricating an insulated-gate field effect transistor
Inventor:
Hiroyasu Enjoh
Patented Case
View Patent ↗
Granted: Feb 22, 1994
Filed: Feb 25, 1992
Inventor
Hiroyasu Enjoh
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.