IP Library Granted Patent US 5,298,445
Granted Patent Utility
US 5,298,445 · App. 08/065,622

Method for fabricating a field effect transistor

Inventor: Kazunori Asano
Patented Case View Patent ↗
Granted: Mar 29, 1994 Filed: May 21, 1993
Inventor
Kazunori Asano
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 5,298,445
App. No.
08/065,622
Filed
1993-05-21
Granted
1994-03-29
Kind
A