Granted Patent
Utility
US 5,306,649 · App. 07/982,226
Method for producing a fully walled emitter-base structure in a bipolar transistor
Inventor:
Francois Hebert
Patented Case
View Patent ↗
Granted: Apr 26, 1994
Filed: Nov 25, 1992
Inventor
Francois Hebert
Assignee (at issue)
Avantek, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.