Granted Patent
Utility
US 5,310,698 · App. 07/812,712
Process for producing an arsenic-doped smooth polycrystalline silicon layer for very large scale integrated circuits
Inventor:
Barbara Geborene Neé Reil Wild
Patented Case
View Patent ↗
Granted: May 10, 1994
Filed: Dec 23, 1991
Inventor
Barbara Geborene Neé Reil Wild
Assignee (at issue)
Siemens Aktiengesellschaft
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.