IP Library › Granted Patent US 5,314,841
Granted Patent Utility
US 5,314,841 · App. 08/054,992

Method of forming a frontside contact to the silicon substrate of a SOI wafer

Inventors: Frederick Brady, Nadim F. Haddad
Patented Case View Patent ↗
Granted: May 24, 1994 Filed: Apr 30, 1993
Inventors
Frederick Brady
Nadim F. Haddad
Assignee (at issue)
International Business Machines Corporation

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Quick Facts
Patent No.
US 5,314,841
App. No.
08/054,992
Filed
1993-04-30
Granted
1994-05-24
Kind
A