IP Library › Granted Patent US 5,316,980
Granted Patent Utility
US 5,316,980 · App. 07/929,161

Method of making a semiconductor device by dry etching process

Inventor: Shinichi Takeshiro
Patented Case View Patent ↗
Granted: May 31, 1994 Filed: Aug 11, 1992
Inventor
Shinichi Takeshiro
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 5,316,980
App. No.
07/929,161
Filed
1992-08-11
Granted
1994-05-31
Kind
A