Granted Patent
Utility
US 5,319,212 · App. 07/958,077
Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors
Inventor:
Nobuhiro Tokoro
Patented Case
View Patent ↗
Granted: Jun 7, 1994
Filed: Oct 7, 1992
Inventor
Nobuhiro Tokoro
Assignee (at issue)
Genus, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.