Granted Patent
Utility
US 5,319,236 · App. 07/913,493
Semiconductor device equipped with a high-voltage MISFET
Inventor:
Tatsuhiko Fujihira
Patented Case
View Patent ↗
Granted: Jun 7, 1994
Filed: Jul 14, 1992
Inventor
Tatsuhiko Fujihira
Assignee (at issue)
FUJI ELECTRIC CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.