Granted Patent
Utility
US 5,323,021 · App. 08/063,212
Semiconductor integrated circuit device having diode and bipolar transistor held in contact through oxygen-leakage film with emitter electrode
Inventor:
Hidekazu Hasegawa
Patented Case
View Patent ↗
Granted: Jun 21, 1994
Filed: May 17, 1993
Inventor
Hidekazu Hasegawa
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.