Granted Patent
Utility
US 5,323,032 · App. 07/941,723
Dual layer epitaxtial base heterojunction bipolar transistor
Inventors:
Fumihiko Sato, Tsutomu Tashiro
Patented Case
View Patent ↗
Granted: Jun 21, 1994
Filed: Sep 8, 1992
Inventors
Fumihiko Sato
Tsutomu Tashiro
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.