IP Library › Granted Patent US 5,334,545
Granted Patent Utility
US 5,334,545 · App. 08/011,632

Process for forming self-aligning cobalt silicide T-gates of silicon MOS devices

Inventor: Anthony Caviglia
Patented Case View Patent ↗
Granted: Aug 2, 1994 Filed: Feb 1, 1993
Inventor
Anthony Caviglia
Assignee (at issue)
AlliedSignal, Inc.

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Quick Facts
Patent No.
US 5,334,545
App. No.
08/011,632
Filed
1993-02-01
Granted
1994-08-02
Kind
A