IP Library Granted Patent US 5,340,752
Granted Patent Utility
US 5,340,752 · App. 07/965,823

Method for forming a bipolar transistor using doped SOG

Inventors: Derryl D. J. Allman, Dim-Lee Kwong
Patented Case View Patent ↗
Granted: Aug 23, 1994 Filed: Oct 23, 1992
Inventors
Derryl D. J. Allman
Dim-Lee Kwong
Assignee (at issue)
NCR Corporation

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Quick Facts
Patent No.
US 5,340,752
App. No.
07/965,823
Filed
1992-10-23
Granted
1994-08-23
Kind
A