Granted Patent
Utility
US 5,344,793 · App. 08/026,944
Formation of silicided junctions in deep sub-micron MOSFETs by defect enhanced CoSi2 formation
Inventors:
Heinrich Zeininger, Christoph Zeller, Udo Schwalke, Uwe Doebler, Wilfried Haensch
Patented Case
View Patent ↗
Granted: Sep 6, 1994
Filed: Mar 5, 1993
Inventors
Heinrich Zeininger
Christoph Zeller
Udo Schwalke
Uwe Doebler
Wilfried Haensch
Assignee (at issue)
Siemens Aktiengesellschaft
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.