Granted Patent
Utility
US 5,346,587 · App. 08/105,276
Planarization of a gate electrode for improved gate patterning over non-planar active area isolation
Inventors:
Trung T. Doan, Charles H. Dennison
Patented Case
View Patent ↗
Granted: Sep 13, 1994
Filed: Aug 12, 1993
Inventors
Trung T. Doan
Charles H. Dennison
Assignee (at issue)
Micron Semiconductor, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.