IP Library Granted Patent US 5,353,737
Granted Patent Utility
US 5,353,737 · App. 08/046,804

Method for forming boron-doped semiconducting diamond films

Inventors: Hisashi Koyama, Koichi Miyata, Koji Kobashi
Patented Case View Patent ↗
Granted: Oct 11, 1994 Filed: Apr 16, 1993
Inventors
Hisashi Koyama
Koichi Miyata
Koji Kobashi
Assignee (at issue)
Kabushiki Kaisha Kobe Seiko Sho

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Quick Facts
Patent No.
US 5,353,737
App. No.
08/046,804
Filed
1993-04-16
Granted
1994-10-11
Kind
A