Granted Patent
Utility
US 5,360,760 · App. 08/039,749
Vapor phase epitaxial growth method of a compound semiconductor
Inventor:
Jun Hayashi
Patented Case
View Patent ↗
Granted: Nov 1, 1994
Filed: Mar 30, 1993
Inventor
Jun Hayashi
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.