Granted Patent
Utility
US 5,360,983 · App. 08/046,956
Insulated gate bipolar transistor having a specific buffer layer resistance
Inventor:
Noriyuki Iwamuro
Patented Case
View Patent ↗
Granted: Nov 1, 1994
Filed: Apr 16, 1993
Inventor
Noriyuki Iwamuro
Assignee (at issue)
FUJI ELECTRIC CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.