Granted Patent
Utility
US 5,366,914 · App. 08/011,151
Vertical power MOSFET structure having reduced cell area
Inventors:
Nobumitsu Takahashi, Mitsuasa Takahashi, Hitoshi Kubota
Patented Case
View Patent ↗
Granted: Nov 22, 1994
Filed: Jan 29, 1993
Inventors
Nobumitsu Takahashi
Mitsuasa Takahashi
Hitoshi Kubota
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.