Granted Patent
Utility
US 5,366,915 · App. 08/107,921
Process of fabricating floating gate type field effect transistor having drain region gently varied in impurity profile
Inventor:
Noriaki Kodama
Patented Case
View Patent ↗
Granted: Nov 22, 1994
Filed: Aug 16, 1993
Inventor
Noriaki Kodama
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.