IP Library Granted Patent US 5,369,300
Granted Patent Utility
US 5,369,300 · App. 08/075,182

Multilayer metallization for silicon semiconductor devices including a diffusion barrier formed of amorphous tungsten/silicon

Inventors: Robert J. Heideman, Randy A. Rusch, Michael S. Baird
Patented Case View Patent ↗
Granted: Nov 29, 1994 Filed: Jun 10, 1993
Inventors
Robert J. Heideman
Randy A. Rusch
Michael S. Baird
Assignee (at issue)
DELCO ELECTRONICS CORPORATION

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Quick Facts
Patent No.
US 5,369,300
App. No.
08/075,182
Filed
1993-06-10
Granted
1994-11-29
Kind
A