IP Library Granted Patent US 5,371,039
Granted Patent Utility
US 5,371,039 · App. 08/019,359

Method for fabricating capacitor having polycrystalline silicon film

Inventor: Shizuo Oguro
Patented Case View Patent ↗
Granted: Dec 6, 1994 Filed: Feb 18, 1993
Inventor
Shizuo Oguro
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 5,371,039
App. No.
08/019,359
Filed
1993-02-18
Granted
1994-12-06
Kind
A