Granted Patent
Utility
US 5,372,953 · App. 08/020,543
Method of manufacturing a bipolar transistor included in an integrated circuit having no field oxide film between a p-type region and its electrode
Inventor:
Akio Matsuoka
Patented Case
View Patent ↗
Granted: Dec 13, 1994
Filed: Feb 22, 1993
Inventor
Akio Matsuoka
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.