Granted Patent
Utility
US 5,374,843 · App. 08/040,684
Lightly-doped drain MOSFET with improved breakdown characteristics
Inventors:
Richard K. Williams, Michael E. Cornell, Mike F. Chang, David G. Grasso, Agnes Yeung, Juiping Chuang
Patented Case
View Patent ↗
Granted: Dec 20, 1994
Filed: Mar 31, 1993
Inventors
Richard K. Williams
Michael E. Cornell
Mike F. Chang
David G. Grasso
Agnes Yeung
Juiping Chuang
Assignee (at issue)
Silinconix, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.