Granted Patent
Utility
US 5,384,270 · App. 08/149,824
Method of producing silicon carbide MOSFET
Inventor:
Katsunori Ueno
Patented Case
View Patent ↗
Granted: Jan 24, 1995
Filed: Nov 10, 1993
Inventor
Katsunori Ueno
Assignee (at issue)
FUJI ELECTRIC CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.