Granted Patent
Utility
US 5,386,136 · App. 07/697,356
Lightly-doped drain MOSFET with improved breakdown characteristics
Inventors:
Richard K. Williams, Michael E. Cornell
Patented Case
View Patent ↗
Granted: Jan 31, 1995
Filed: May 6, 1991
Inventors
Richard K. Williams
Michael E. Cornell
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.