Granted Patent
Utility
US 5,393,683 · App. 07/887,785
Method of making semiconductor devices having two-layer gate structure
Inventors:
Viju K. Mathews, Charles H. Dennison, Pierre C. Fazan, Roy L. Maddox, III, Akram Ditali
Patented Case
View Patent ↗
Granted: Feb 28, 1995
Filed: May 26, 1992
Inventors
Viju K. Mathews
Charles H. Dennison
Pierre C. Fazan
Roy L. Maddox, III
Akram Ditali
Assignee (at issue)
Micron Technology, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.