IP Library Granted Patent US 5,400,355
Granted Patent Utility
US 5,400,355 · App. 08/217,174

Semiconductor double-channel-planar-buried-heterostructure laser diode effective against leakage current

Inventor: Tomoko Ishida
Patented Case View Patent ↗
Granted: Mar 21, 1995 Filed: Mar 24, 1994
Inventor
Tomoko Ishida
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 5,400,355
App. No.
08/217,174
Filed
1994-03-24
Granted
1995-03-21
Kind
A