Granted Patent
Utility
US 5,404,040 · App. 08/096,135
Structure and fabrication of power MOSFETs, including termination structures
Inventors:
Fwu-Iuan Hshieh, Mike F. Chang, Jun-Wei Chen, King Owyang, Dorman C. Pitzer, Jan V. D. Linde
Patented Case
View Patent ↗
Granted: Apr 4, 1995
Filed: Jul 22, 1993
Inventors
Fwu-Iuan Hshieh
Mike F. Chang
Jun-Wei Chen
King Owyang
Dorman C. Pitzer
Jan V. D. Linde
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.