IP Library Granted Patent US 5,405,791
Granted Patent Utility
US 5,405,791 · App. 08/317,280

Process for fabricating ULSI CMOS circuits using a single polysilicon gate layer and disposable spacers

Inventors: Aftab Ahmad, Tyler Lowrey
Patented Case View Patent ↗
Granted: Apr 11, 1995 Filed: Oct 4, 1994
Inventors
Aftab Ahmad
Tyler Lowrey
Assignee (at issue)
Micron Semiconductor, Inc.

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Quick Facts
Patent No.
US 5,405,791
App. No.
08/317,280
Filed
1994-10-04
Granted
1995-04-11
Kind
A